Samsung Electronics Considers Converting Giheung NRD-K Line 2 to Foundry

Samsung Electronics is reviewing the option to convert its Giheung NRD-K Line 2 into a foundry production line. The target product is NVIDIA's 2-nanometer HBM-based die. This line aims to commence operations in the second half of 2028 and may operate under the 'Send-Fab' model. NRD-K is a next-generation semiconductor research and development complex being established by Samsung Electronics at its Giheung campus, with a total investment of approximately 20 trillion won. This review is aimed at reallocating some research and development facilities to meet the demand for AI semiconductor foundries. HBM-based dies are logic chips that vertically stack DRAM to exchange data with external processors, and the role of foundry processes is increasing following HBM4. Samsung plans to apply the 2-nanometer process to customized HBM and HBM5. The importance of base die processes and packaging technologies is growing in the next-generation HBM competition. The conversion of NRD-K Line 2 is still in the medium to long-term review stage, and the final application may vary depending on market conditions. DRAM production capacity is expected to be concentrated at the Pyeongtaek campus.

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